Model of solar cell proton damage

Abstract

A short circuit current (I sub sc) degradation model for gallium arsenide (GaAs) solar cells irradiated by protons from low energy to 100 MeV was developed. This model was found to be satisfactory in predicting the I sub sc degradation of GaAs cells, but not that of silicon (Si) cells. A modification to the aforementioned model that preserves the optical wavelength dependency in the photogeneration of minority carrier pairs was described herein. Spectral Si and GaAs response and I sub sc for the Si and GaAs solar cells were discussed, and also were presented in graph form. The overall predictability of the modified model was deemed to be satisfactory.