Development of metallization process: FSA project, cell and module formation research area

Abstract

This experiment is involved in determining bulk resistivity values for different past concentrations. Experiments were performed on silicon Cz and non-Cz wafers. To determine bulk resistivity more accurately, pastes were printed on ceramic substrates. Contact resistance was determined by measuring the voltage drop at constant current. Because of irregularity of grid profiles, accurate determination of cross sections of grid lines is difficult. The bulk resistivity is accurate when the resistivity of the metallization is much less than that of the layer beneath it. When the resistivity of the metal approaches that of the substrate, the actual resistivity will be larger than the measured value.