NASA NTRS ยท 19840025960
Development of metallization process
Abstract
Pastes are evaluated that contain additives to aid in the silicon to metallization contact. None are completely successful. Pastes are evaluated using a heated stage scanning electron microscope (SEM). This equipment shows promise for future evaluations.
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Garcia, A., III. 1984-07-01. Development of metallization process. https://ntrs.nasa.gov/citations/19840025960
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