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NASA NTRS · 19840032672

Neutron-transmutation-doped germanium bolometers

Abstract

Six slices of ultra-pure germanium were irradiated with thermal neutron fluences between 7.5 x 10 to the 16th and 1.88 x 10 to the 18th per sq cm. After thermal annealing the resistivity was measured down to low temperatures (less than 4.2 K) and found to follow the relationship rho = rho sub 0 exp(Delta/T) in the hopping conduction regime. Also, several junction FETs were tested for noise performance at room temperature and in an insulating housing in a 4.2 K cryostat. These FETs will be used as first stage amplifiers for neutron-transmutation-doped germanium bolometers.

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BibTeXRIS

Palaio, N. P., Rodder, M., Haller, E. E., Kreysa, E.. 1983-11-01. Neutron-transmutation-doped germanium bolometers. https://ntrs.nasa.gov/citations/19840032672

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