NASA NTRS · 19840040083
Characterisation of semi-insulating GaAs
Abstract
Hole and electron mobilities as functions of temperature and ionised impurity concentration are calculated for GaAs. It is shown that these calculations, when used to analyse electrical properties of semi-insulating GaAs, enable an assessment of the Fermi energy position and ionised impurity concentration to be made. In contrast to previous work, the analysis does not require any phenomenological assumptions.
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Walukiewicz, W., Pawlowicz, L., Lagowski, J., Gatos, H. C.. 1982-01-01. Characterisation of semi-insulating GaAs. https://ntrs.nasa.gov/citations/19840040083
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