NASA NTRS · 19840043241
Diffused junction p(+)-n solar cells in bulk GaAs. II - Device characterization and modelling
Abstract
The photovoltaic characteristics of p(+)-n junction solar cells fabricated on bulk GaAs by an open tube diffusion technique are presented in detail. Quantum efficiency measurements were analyzed and compared to computer simulations of the cell structure in order to determine material parameters such as diffusion length, surface recombination velocity and junction depth. From the results obtained it is projected that proper optimization of the cell parameters can increase the efficiency of the cells to close to 20 percent.
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Keeney, R., Sundaram, L. M. G., Rode, H., Bhat, I., Ghandhi, S. K., Borrego, J. M.. 1984-02-01. Diffused junction p(+)-n solar cells in bulk GaAs. II - Device characterization and modelling. https://ntrs.nasa.gov/citations/19840043241
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