NASA NTRS · 19840045189
High-efficiency V-band GaAs IMPATT diodes
Abstract
Double-drift GaAs IMPATT diodes were designed for V-band frequency operations and fabricated using molecular-beam epitaxy. The diodes were fabricated in two configurations: (1) circular mesa diodes with silver-plated (integrated) heat sinks: (2) pill-type diodes bonded to diamond heat sinks. Both configurations utilized a miniature quartz-ring package. Output power greater than 1 W CW was achieved at V-band frequencies from diodes on diamond heat sinks. The best conversion efficiency was 13.3 percent at 55.5 GHz with 1 W output power.
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Ma, Y. E., Benko, E., Trinh, T., Erickson, L. P., Mattord, T. J.. 1984-03-01. High-efficiency V-band GaAs IMPATT diodes. https://ntrs.nasa.gov/citations/19840045189
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