NASA NTRS · 19840051131
Interaction between boron and intrinsic defects in GaAs
Abstract
A model has been developed to describe the interaction between boron and antisite defects in bulk grown undoped liquid uncapsulated Czochralski GaAs. This model helps explain the observed experimental behavior. The model indicates that the residual double acceptor can most likely be associated with either Ga(As) or B(As).
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Elliott, K. R.. 1984-05-15. Interaction between boron and intrinsic defects in GaAs. https://ntrs.nasa.gov/citations/19840051131
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