NASA NTRS · 19850003149
Research on gallium arsenide diffused junction solar cells
Abstract
The feasibility of using bulk GaAs for the fabrication of diffused junction solar cells was determined. The effects of thermal processing of GaAs was studied, and the quality of starting bulk GaAs for this purpose was assessed. These cells are to be made by open tube diffusion techniques, and are to be tested for photovoltaic response under AMO conditions.
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Borrego, J. M., Ghandi, S. K.. 1984-10-01. Research on gallium arsenide diffused junction solar cells. https://ntrs.nasa.gov/citations/19850003149
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