NASA NTRS · 19850004061
Bending strength studies on hot-pressed silicon carbide
Abstract
The 4-point bending strength of 4 grades of hot-pressed SiC was determined at different temperatures. With a transgranular mode of fracture the values for bending strength are retained up to high temperatures. For intergranular fracture the decrease of strength is governed by subcritical crack growth. The intergranular fracture is caused by a high content of silicate glassy phase at the grain boundaries of hot-pressed SiC.
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Kriegesmann, J.. 1984-08-01. Bending strength studies on hot-pressed silicon carbide. https://ntrs.nasa.gov/citations/19850004061
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