NASA NTRS · 19850020515
GaAs MESFET with lateral non-uniform doping
Abstract
An analytical model of the GaAs MESFET with arbitrary non-uniform doping is presented. Numerical results for linear lateral doping profile are given as a special case. Theoretical considerations predict that better device linearity and improved F(T) can be obtained by using linear lateral doping when doping density increases from source to drain.
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Wang, Y. C., Bahrami, M.. 1983-09-01. GaAs MESFET with lateral non-uniform doping. https://ntrs.nasa.gov/citations/19850020515
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