NASA NTRS · 19850023314
Nitridation of SiO2 for surface passivation
Abstract
An attempt is made to relate the electrical properties of silicon dioxide film to the process history. A model is proposed to explain some of the observed results. It is shown that with our present knowledge of the dielectric, silicon dioxide film shows a lot of promise for its use in surface passivation, both for its resistance to impurity diffusion and for its resistance to radiation damage effects.
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Lai, S. K. C.. 1985-05-15. Nitridation of SiO2 for surface passivation. https://ntrs.nasa.gov/citations/19850023314
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