NASA NTRS · 19850024127
Stress and efficiency studies in EFG
Abstract
Stress and efficiency studies in EFG were carried out for silicon sheet growth. Methods were developed to quantify influence of dislocation electrical activity on bulk lifetime. A new creep law formulation for silicon stress was developed. Bulk lifetime degradation due to increase in doping levels was also examined.
Keep this discovery
Explore connections, maps & timelines
Kalejs, J. P.. 1984-10-01. Stress and efficiency studies in EFG. https://ntrs.nasa.gov/citations/19850024127
Cite the original work for its findings. Save a collection to share your selection of sources.