NASA NTRS · 19860000411
GaAs Semi-Insulating Layer for a GaAs Device
Abstract
Improved design for GaAs electronic device or integrated circuit designed to operate at cryogenic temperatures, customary SiO2 insulating layer replaced by semi-insulating layer of GaAs. Thermal expansions of device and covering layer therefore match closely, and thermal stresses caused by immersion in cryogenic chamber nearly eliminated.
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Sherrill, G., Mattauch, R. J.. 1986-09-01. GaAs Semi-Insulating Layer for a GaAs Device. https://ntrs.nasa.gov/citations/19860000411
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