NASA NTRS · 19860011201
Hybrid power semiconductor
Abstract
The voltage rating of a bipolar transistor may be greatly extended while at the same time reducing its switching time by operating it in conjunction with FETs in a hybrid circuit. One FET is used to drive the bipolar transistor while the other FET is connected in series with the transistor and an inductive load. Both FETs are turned on or off by a single drive signal of load power, the second FET upon ceasing conductions, rendering one power electrode of the bipolar transistor open. Means are provided to dissipate currents which flow after the bipolar transistor is rendered nonconducting.
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Chen, D. Y.. 1985-10-15. Hybrid power semiconductor. https://ntrs.nasa.gov/citations/19860011201
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