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NASA NTRS ยท 19860019908

Pulsed excimer laser processing

Abstract

The status of pulsed excimer laser processing of PV cells is presented. The cost effective feasibility of fabricating high efficiency solar cells on Czochralski wafers using a pulsed excimer laser for junction formation, surface passivation, and front metallization. Laser annealing results were promising with the best AR coated cell having an efficiency of 16.1%. Better results would be expected with larger laser spot size because there was some degradation in open circuit voltage caused by laser spot overlap and edge effects. Surface heating and photolytic decomposition by the laser was used to deposit tungsten from the reaction of tungsten hexafluoride and hydrogen. The line widths were 5 to 10 mils, and the depositions passed the tape adhesion test. Thinner lines are practical using an optimized optical system.

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BibTeXRIS

Wong, D.. 1985-06-01. Pulsed excimer laser processing. https://ntrs.nasa.gov/citations/19860019908

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