Lithium counterdoped silicon solar cell

Abstract

The resistance to radiation damage of an n(+)p boron doped silicon solar cell is improved by lithium counterdoping. Even though lithium is an n-dopant in silicon, the lithium is introduced in small enough quantities so that the cell base remains p-type. The lithium is introduced into the solar cell wafer by implantation of lithium ions whose energy is about 50 keV. After this lithium implantation, the wafer is annealed in a nitrogen atmosphere at 375 C for two hours.