NASA NTRS · 19870000045
Fast-Response Heating of Silicon Melts
Abstract
Proposed improvement for silicon crystal growing enables rapid heating of melt in vicinity of liquid-solid interface to compensate for decreases in melt temperature, to ensure uniform diameter and composition in ingot. Intended for growing large silicon ingots by Czochralski process, cylindrical single-crystal ingot pulled from molten silicon. Heating confined to small mass near growing crystal.
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Morrison, A. D.. 1987-01-01. Fast-Response Heating of Silicon Melts. https://ntrs.nasa.gov/citations/19870000045
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