NASA NTRS · 19870000799
Optically controlled GaAs dual-gate MESFET and permeable base transistors
Abstract
Optically induced voltage and dc characteristics of the GaAs Dual-gate MESFET and the Permeable Base Transistor (PBT) with optical illumination at wavelength below 0.87 microns were obtained and compared with GaAs MESFET. It was observed that PBT can handle higher current density when illuminated.
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Simons, R. N., Bhasin, K. B.. 1986-01-01. Optically controlled GaAs dual-gate MESFET and permeable base transistors. https://ntrs.nasa.gov/citations/19870000799
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