Progress in the development of integrating JFET amplifiers

Abstract

A new approach to infrared detector readout has appeared with the development of integrating JFET amplifiers. This brief progress report includes results on the operation of commercially available devices at a temperature of 40 K, on their sensitivity and on an effort to develop a new JFET with properties optimized for cryogenic applications. Even with presently available devices it will be shown that for applications such as the Space Infrared Telescope Facility (SIRTF), the most strigent sensitivity requirements of noise currents as low as 1 electron/sec in less than 100 seconds of integration can be met.