NASA NTRS · 19870007539
The 20 GHz power GaAs FET development
Abstract
The development of power Field Effect Transistors (FET) operating in the 20 GHz frequency band is described. The major efforts include GaAs FET device development (both 1 W and 2 W devices), and the development of an amplifier module using these devices.
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Crandell, M.. 1986-09-01. The 20 GHz power GaAs FET development. https://ntrs.nasa.gov/citations/19870007539
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