NASA NTRS · 19880000085
Studies Of Single-Event-Upset Models
Abstract
Report presents latest in series of investigations of "soft" bit errors known as single-event upsets (SEU). In this investigation, SEU response of low-power, Schottky-diode-clamped, transistor/transistor-logic (TTL) static random-access memory (RAM) observed during irradiation by Br and O ions in ranges of 100 to 240 and 20 to 100 MeV, respectively. Experimental data complete verification of computer model used to simulate SEU in this circuit.
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Zoutendyk, J. A., Smith, L. S., Soli, G. A.. 1988-02-01. Studies Of Single-Event-Upset Models. https://ntrs.nasa.gov/citations/19880000085
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