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NASA NTRS ยท 19880000143

Micromachining Of Silicon

Abstract

Etching rates of alloys and heavily-doped semiconductor materials significantly higher than lightly doped semiconductor if proper etching system used. Selectivity used to etch regions of semiconductor preferentially while not etching other unmasked regions. When selective etching used with laser-induced-diffusion techniques, possible to make structures that cannot be made at present. Possible to produce well-defined structures in and through wafer while not damaging existing structures on wafer.

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BibTeXRIS

Dickman, John E.. 1988-02-01. Micromachining Of Silicon. https://ntrs.nasa.gov/citations/19880000143

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