NASA NTRS · 19880000505
Antireflection/Passivation Step For Silicon Cell
Abstract
New process excludes usual silicon oxide passivation. Changes in principal electrical parameters during two kinds of processing suggest antireflection treatment almost as effective as oxide treatment in passivating cells. Does so without disadvantages of SiOx passivation.
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Crotty, Gerald T., Kachare, Akaram H., Daud, Taher. 1988-10-01. Antireflection/Passivation Step For Silicon Cell. https://ntrs.nasa.gov/citations/19880000505
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