Characterization of sintered SiC by using NDE

Abstract

Capabilities of projection microfocus X-radiography and of ultrasonic velocity and attenuation for characterizing silicon carbide specimens were assessed. Silicon carbide batches covered a range of densities and different microstructural characteristics. Room-temperature, four-point flexural strength tests were conducted. Fractography was used to identify types, sizes, and locations of fracture origins. Fracture toughness values were calculated from fracture strength and flaw characterization data. Detection capabilities of radiography for fracture-causing flaws were evaluated. Applicability of ultrasonics for verifying material strength and toughness was examined. Radiography proved useful in detecting high-density inclusions and isolated voids, but failed in detecting surface and subsurface agglomerates and large grains as fracture origins. Ultrasonic velocity dependency on density was evident. Attenuation dependency on density and mean pore size was clearly demonstrated. Understanding attenuation as a function of toughness was limited by shortcomings in K sub IC determination.