NASA NTRS · 19880018917
Development of 30 micrometers extrinsic silicon multiplexed infrared deterctor array
Abstract
Two hybrid infrared (IR) detector arrays of antimony-doped silicon (Si:Sb) were produced and tested to evaluate their potential for use in low-background IR astronomy applications. The format of the arrays is 58 x 62 elements, with 76 micron-square pixels. A random-access, switched metal-oxide semiconductor field effect transistor (MOSFET) silicon multiplexer is used to read out the array elements. Reduced-background tests of signal, noise, and noise equivalent power were conducted over the temperature range 3.2 to 12 K. The arrays were found to have good sensitivity and good uniformity.
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Orias, G., Campbell, D.. 1986-06-01. Development of 30 micrometers extrinsic silicon multiplexed infrared deterctor array. https://ntrs.nasa.gov/citations/19880018917
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