NASA NTRS · 19880038421
Optical waveguides in oxygen-implanted buried-oxide silicon-on-insulator structures
Abstract
An analysis is made of the waveguiding properties of the oxygen-implanted, buried-oxide, silicon-on-insulator structures currently being developed for use in microelectronics. It is found that in spite of the fact that the buried-oxide layer is only a few tenths of a micrometer thick, the single-crystal overlayer can support TEo guided-wave propagation, at subbandgap wavelengths, with losses due to substrate radiation leakage at or below the benchmark level of 1 dB/cm.
Keep this discovery
Explore connections, maps & timelines
Kurdi, B. N., Hall, D. G.. 1988-02-01. Optical waveguides in oxygen-implanted buried-oxide silicon-on-insulator structures. https://ntrs.nasa.gov/citations/19880038421
Cite the original work for its findings. Save a collection to share your selection of sources.