NASA NTRS · 19890000155
Metal Film Increases CCD Quantum Efficiency
Abstract
Thin layer of platinum or other high-work-function metal applied to back side of rear-illuminated charge-coupled device (CCD) achieves quantum efficiency (QE)-pinned state, an ideal condition allowing sensor to achieve 100-percent internal charge-collection efficiency within its photosensitive volume. Metal layer, called flash gate, easily applied by tungsten vacuum deposition during last step of sensor fabrication.
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Janesick, James R.. 1989-04-01. Metal Film Increases CCD Quantum Efficiency. https://ntrs.nasa.gov/citations/19890000155
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