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NASA NTRS ยท 19890000272

Asymmetrical SRAM Cells For Radiation Tests

Abstract

Features of circuits altered to increase or decrease sensitivity to radiation. State-space analysis used to analyze single-event-upset behavior of memory cell. When voltage on node a is set at one of indicated initial values Vao and then released, voltages on nodes a and b then follow indicated trajectory to final logic "one" or logic "zero" state. Ability to do this important for design of radiation-detecting integrated circuits (deliberately made more sensitive to ionizing radiation) and "radiation-hardened" integrated circuits - those intended to be relatively invulnerable to intense radiation.

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BibTeXRIS

Buehler, Martin G.. 1989-06-01. Asymmetrical SRAM Cells For Radiation Tests. https://ntrs.nasa.gov/citations/19890000272

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