Alternating-Gradient Photodetector For Far Infrared

Abstract

Proposed detector of photons of wavelengths in range of 30 to 200 micrometer made of alternating layers of lightly and heavily negatively doped germanium. Formed in sequence by conventional chemical-vapor deposition. Alternating-gradient structure enhances collection of photogenerated charge carriers while suppressing dark current, thus achieving high detectivity. Alternating layers of n+ and n- germanium provides high detectivity in far-infrared spectral region. Also possible to make similar structures with positive doping and with other semiconductors as silicon or gallium arsenide to obtain various spectral response.