NASA NTRS · 19890019450
Monolithic narrow-linewidth InGaAsP semiconductor laser for coherent optical communications
Abstract
A design for a monolithic narrow-linewidth InGaAsP diode laser has been developed using a multiple-quantum-well (MQW) extended-passive-cavity distributed-Bragg-reflector (DBR) laser design. Theoretical results indicate that this structure has the potential for a linewidth of 100 kHz or less. To realize this device, a number of the fabrication techniques required to integrate low-loss passive waveguides with active regions have been developed using a DBR laser structure. In addition, the MOCVD growth of InGaAs MQW laser structures has been developed, and threshold current densities as low as 1.6 kA/sq cm have been obtained from broad-stripe InGaAs/InGaAsP separate-confinement-heterostructure MQW lasers.
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Palfrey, S. L., Enstrom, R. E., Longeway, P. A.. 1989-09-01. Monolithic narrow-linewidth InGaAsP semiconductor laser for coherent optical communications. https://ntrs.nasa.gov/citations/19890019450
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