Steady-state thermal-solutal diffusion in a float zone

Abstract

A model for a float zone in a thin vertical sheet is used to study the formation of the zone configuration for both pure and binary systems of Si and GeGa. Equations describing the steady two-dimensional diffusion of solute in the melt and diffusion of heat in the feed material and the product crystal are presented. The material properties, asymptotic solutions for the temperature and concentration profiles, and melting, solidifying, and melt/gas interfacial shapes are determined in the small aspect ratio limit.