32-GHz cryogenically cooled HEMT low-noise amplifiers

Abstract

The cryogenic noise temperature performance of a two-stage and a three-stage 32 GHz high electron mobility transistor (HEMT) amplifier was evaluated. The amplifiers employ 0.25 micrometer conventional AlGaAs/GaAs HEMT devices, hybrid matching input and output microstrip circuits, and a cryogenically stable dc biasing network. The noise temperature measurements were performed in the frequency range of 31 to 33 GHz over a physical temperature range of 300 K down to 12 K. Across the measurement band, the amplifiers displayed a broadband response, and the noise temperature was observed to decrease by a factor of 10 in cooling from 300 to 15 K. The lowest noise temperature measured for the two-stage amplifier at 32 GHz was 35 K with an associated gain of 16.5 dB, while the three-stage amplifier measured 39 K with an associated gain of 26 dB. It was further observed that both amplifiers were insensitive to light.