NASA NTRS · 19900000257
Silicide Schottky Barrier For Back-Surface-Illuminated CCD
Abstract
Quantum efficiency of back-surface-illuminated charge-coupled device (CCD) increased by coating back surface with thin layer of PtSi or IrSi on thin layer of SiO2. In its interaction with positively-doped bulk Si of CCD, silicide/oxide layer forms Schottky barrier that repels electrons, promoting accumulation of photogenerated charge carriers in front-side CCD potential wells. Physical principle responsible for improvement explained in "Metal Film Increases CCD Output" (NPO-16815).
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Hecht, Michael H.. 1990-06-01. Silicide Schottky Barrier For Back-Surface-Illuminated CCD. https://ntrs.nasa.gov/citations/19900000257
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