NASA NTRS ยท 19900000313
GTO/FET Cascode Three-Terminal Switch
Abstract
Neither external bias nor energy-storage components required. Three-terminal semiconductor switching circuit features high switching speed, extremely high turnoff safe operating area (area in current-vs-voltage plane), moderately low forward ("on"-state) voltage drop, and efficient utilization of silicon in design of components. Includes gate-turn-off thyristor (GTO) and low-voltage (low-on-resistance) field-effect transistor (FET-1) connected in series to form cascode pair. Made of commercially available, discrete components, as hybrid circuit package or as monolithic integrated circuit.
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Rippel, Wally E.. 1990-07-01. GTO/FET Cascode Three-Terminal Switch. https://ntrs.nasa.gov/citations/19900000313
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