NASA NTRS · 19900000436
Viewing Integrated-Circuit Interconnections By SEM
Abstract
Back-scattering of energetic electrons reveals hidden metal layers. Experiment shows that with suitable operating adjustments, scanning electron microscopy (SEM) used to look for defects in aluminum interconnections in integrated circuits. Enables monitoring, in situ, of changes in defects caused by changes in temperature. Gives truer picture of defects, as etching can change stress field of metal-and-passivation pattern, causing changes in defects.
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Lawton, Russel A., Gauldin, Robert E., Ruiz, Ronald P.. 1990-09-01. Viewing Integrated-Circuit Interconnections By SEM. https://ntrs.nasa.gov/citations/19900000436
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