NASA NTRS · 19900031141
Parametric amplification in AgGaSe2
Abstract
AgGaSe2 has been grown, annealed, and characterized for the mid-IR. Characterization includes measurement of the average power-limiting factors including absorption and the variation of the refractive indices with temperature. Using specially annealed crystals 20 mm long and a Ho:YAG pump, parametric amplification at 3.39 microns has achieved a gain of 2.9 with a peak power input of only 8 MW/sq cm.
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Barnes, Norman P., Gettemy, Donald J., Hietanen, Jack R., Iannini, Rebecca A.. 1989-12-01. Parametric amplification in AgGaSe2. https://ntrs.nasa.gov/citations/19900031141
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