NASA NTRS · 19900044933
GaInAsSb/AlGaAsSb injection lasers for remote sensing applications
Abstract
Double heterostructures of InGaAsSb/AlGaAsSb quaternary alloys on (100) GaSb substrates were grown by the liquid phase epitaxy (LPE) technique. Room temperature operation near 2.1 micron wavelength has been achieved under pulsed conditions with pulsed threshold current density of 7kA/sq cm.
Keep this discovery
Explore connections, maps & timelines
Forouhar, Siamak, Cody, Jeffrey, Katz, Joseph. 1989-01-01. GaInAsSb/AlGaAsSb injection lasers for remote sensing applications. https://ntrs.nasa.gov/citations/19900044933
Cite the original work for its findings. Save a collection to share your selection of sources.