NASA NTRS · 19910000570
Magnet/Hall-Effect Random-Access Memory
Abstract
In proposed magnet/Hall-effect random-access memory (MHRAM), bits of data stored magnetically in Perm-alloy (or equivalent)-film memory elements and read out by using Hall-effect sensors to detect magnetization. Value of each bit represented by polarity of magnetization. Retains data for indefinite time or until data rewritten. Speed of Hall-effect sensors in MHRAM results in readout times of about 100 nanoseconds. Other characteristics include high immunity to ionizing radiation and storage densities of order 10(Sup6)bits/cm(Sup 2) or more.
Keep this discovery
Explore connections, maps & timelines
Wu, Jiin-Chuan, Stadler, Henry L., Katti, Romney R.. 1991-11-01. Magnet/Hall-Effect Random-Access Memory. https://ntrs.nasa.gov/citations/19910000570
Cite the original work for its findings. Save a collection to share your selection of sources.