NASA NTRS · 19910012121
Laterally stacked Schottky diodes for infrared sensor applications
Abstract
Laterally stacked Schottky diodes for infrared sensor applications are fabricated utilizing porous silicon having pores. A Schottky metal contract is formed in the pores, such as by electroplating. The sensors may be integrated with silicon circuits on the same chip with a high quantum efficiency, which is ideal for IR focal plane array applications due to uniformity and reproducibility.
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Lin, True-Lon. 1991-02-05. Laterally stacked Schottky diodes for infrared sensor applications. https://ntrs.nasa.gov/citations/19910012121
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