NASA NTRS · 19910013754
Electron tunnel sensor technology
Abstract
Researchers designed and constructed a novel electron tunnel sensor which takes advantage of the mechanical properties of micro-machined silicon. For the first time, electrostatic forces are used to control the tunnel electrode separation, thereby avoiding the thermal drift and noise problems associated with piezoelectric actuators. The entire structure is composed of micro-machined silicon single crystals, including a folded cantilever spring and a tip. The application of this sensor to the development of a sensitive accelerometer is described.
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Kenny, T. W., Waltman, S. B., Reynolds, J. K., Kaiser, W. J.. 1991-03-01. Electron tunnel sensor technology. https://ntrs.nasa.gov/citations/19910013754
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