NASA NTRS · 19910027614
W-band monolithic oscillator using InAlAs/InGaAs HEMT
Abstract
A W-band monolithic integrated oscillator circuit was designed and fabricated using submicron HEMT technology. The oscillation frequency was around 81 GHz and the power was -7 dBm at the chip level. This is the first report of an InAlAs/InGaAs monolithic oscillator operating at the W-band.
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Kwon, Y., Pavlidis, D., Tutt, M., Ng, G. I., Lai, R.. 1990-08-30. W-band monolithic oscillator using InAlAs/InGaAs HEMT. https://ntrs.nasa.gov/citations/19910027614
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