NASA NTRS · 19910041388
Diode multipliers for submillimeter-wave InAlAs/InGaAs heterostructure monolithic integrated circuits
Abstract
InAlAs/InGaAs heterostructures are studied as multiplier elements for submillimeter-wave monolithic integrated circuits. The designs considered for this purpose are based on the principle of conventional HEMT, HEMT with n+ bottom layer, and a new proposed scheme of quantum-confined modulated charge (QCMC). The QCMC diode is analyzed theoretically and experimentally showing its potential operation capability at 1.5 THz.
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Kwon, Y., Pavlidis, D.. 1991-01-05. Diode multipliers for submillimeter-wave InAlAs/InGaAs heterostructure monolithic integrated circuits. https://ntrs.nasa.gov/citations/19910041388
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