NASA NTRS · 19910052921
Effects of transistor geometry on CCD output sensitivity
Abstract
This paper discusses recent progress in the understanding of the fabrication of low noise floating diffusion output amplifiers for special purpose charge-coupled devices. Emphasis has been given to reducing the total node capacitance and increasing the output sensitivity. Measurements of noise on experimental devices has yielded noise less than 3 electrons rms at 50 kpixel data rate.
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Kim, H., Blouke, Morley M., Heidtmann, D. L.. 1990-01-01. Effects of transistor geometry on CCD output sensitivity. https://ntrs.nasa.gov/citations/19910052921
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