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NASA NTRS · 19910052921

Effects of transistor geometry on CCD output sensitivity

Abstract

This paper discusses recent progress in the understanding of the fabrication of low noise floating diffusion output amplifiers for special purpose charge-coupled devices. Emphasis has been given to reducing the total node capacitance and increasing the output sensitivity. Measurements of noise on experimental devices has yielded noise less than 3 electrons rms at 50 kpixel data rate.

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BibTeXRIS

Kim, H., Blouke, Morley M., Heidtmann, D. L.. 1990-01-01. Effects of transistor geometry on CCD output sensitivity. https://ntrs.nasa.gov/citations/19910052921

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