NASA NTRS · 19910067836
New materials and techniques for improved mm wave devices
Abstract
Current research on microwave and mm wave three terminal semiconductor devices is summarized with particular attention given to the development of the pseudomorphic InGaAs modulation-doped field effect transistor (MODFET). Application of the high-indium-concentration MODFET grown on InP in the temperature range of 120-150 K is also described.
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Alterovitz, Samuel A.. 1991-09-01. New materials and techniques for improved mm wave devices. https://ntrs.nasa.gov/citations/19910067836
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