NASA NTRS · 19920000069
FET's Perform Well At Cryogenic Temperatures
Abstract
New metal-oxide-semiconductor field-effect transistors designed for source-follower preamplifiers operating at liquid-helium temperatures in conjunction with infrared detectors. Lower thresholds and offset give CryoFET's greater dynamic range and linearity than conventional MOSFET's at low temperatures and facilitates pair balancing to reduce offsets in output. Reduces heat loading of cryogenic system, extending life, reliability, and performance of cryogenic infrared instruments.
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Sclar, N.. 1992-02-01. FET's Perform Well At Cryogenic Temperatures. https://ntrs.nasa.gov/citations/19920000069
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