NASA NTRS · 19920000201
Infrared Multiple-Quantum-Well Phototransistor
Abstract
Proposed npn AlxGa1-xAs phototransistor incorporates multiple-quantum-well (MQW) infrared photodetector. Has n-doped contacts and is embedded between p-doped base region and n-doped collector region of transistor. Photocurrent amplified, and dark current suppressed.
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Borenstain, Shmuel I.. 1992-04-01. Infrared Multiple-Quantum-Well Phototransistor. https://ntrs.nasa.gov/citations/19920000201
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