NASA NTRS · 19920012797
Method for producing edge geometry superconducting tunnel junctions utilizing an NbN/MgO/NbN thin film structure
Abstract
A method for fabricating an edge geometry superconducting tunnel junction device is discussed. The device is comprised of two niobium nitride superconducting electrodes and a magnesium oxide tunnel barrier sandwiched between the two electrodes. The NbN electrodes are preferably sputter-deposited, with the first NbN electrode deposited on an insulating substrate maintained at about 250 C to 500 C for improved quality of the electrode.
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Hunt, Brian D., Leduc, Henry G.. 1992-03-31. Method for producing edge geometry superconducting tunnel junctions utilizing an NbN/MgO/NbN thin film structure. https://ntrs.nasa.gov/citations/19920012797
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