Pressure transducer and system for cryogenic environments

Abstract

A silicon pressure die is bonded to a borosilicate substrate above the pneumatic port. A Wheatstone bridge circuit is formed on the silicon pressure die and has bridge elements of silicon doped with boron to a deposit density level of approximately 1 x 10(exp 19)-10(exp 21) boron/cc. A current source is provided to excite the Wheatstone bridge circuit. In addition, a temperature sensor is provided to provide temperature readings. An array may be formed of the resulting pressure transducers. This unique solution of materials permits operation of a pressure transducer in cryogenic environments.