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NASA NTRS · 19920031618

Field-emitter arrays for vacuum microelectronics

Abstract

An ongoing program on microfabricated field-emitter arrays has produced a gated field-emitter tip structure with submicrometer dimensions and techniques for fabricating emitter arrays with tip packaging densities of up to 1.5 x 10 exp 7 tips/sq cm. Arrays have been fabricated over areas varying from a few micrometers up to 13 cm in diameter. Very small overall emitter size, materials selection, and rigorous emitter-tip processing procedures have contributed to reducing the potential required for field emission to tens of volts. Emission current densities of up to 100 A/sq cm have been achieved with small arrays of tips, and 100-mA total emission is commonly produced with arrays 1 mm in diameter containing 10,000 tips. Transconductances of 5.0 micro-S per tip have been demonstrated, indicating that 50 S/sq cm should be achievable with tip densities of 10 exp 7 tips/sq cm. Details of the cathode arrays and a variety of performance characteristics are discussed.

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BibTeXRIS

Spindt, C. A., Holland, C. E., Rosengreen, A., Brodie, Ivor. 1991-10-01. Field-emitter arrays for vacuum microelectronics. https://ntrs.nasa.gov/citations/19920031618

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